类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 类型 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 子类别 | 电压 - 额定直流 | 最大功率耗散 | 技术 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 极性 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 产品类别 | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 恢复时间 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 产品类别 | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||
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2SK1284-Z-E1-AZ | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Renesas Electronics America Inc | Bulk | 活跃 | * | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NDS8958 | ON Semiconductor | 数据表 | 968 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 2 | 40 ns | 5.3A 4A | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 50mOhm | 900mW | 2.9A | Dual | 2W | N and P-Channel | 35m Ω @ 5.3A, 10V | 2.8V @ 250μA | 720pF @ 15V | 30nC @ 10V | 20ns | 19 ns | 4A | 1.6V | 20V | 30V | 逻辑电平门 | 1.6 V | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SP8K80TB1 | Rohm Semiconductor | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 活跃 | 500mA (Ta) | 0.5(A) | 500(V) | Military | SOP | -55C to 150C | ±30(V) | Rohm Semiconductor | Enhancement | 2 | 无 | 表面贴装 | 2500 | ROHM 半导体 | ROHM 半导体 | Details | - | 卷带 | - | 功率MOSFET | MOSFETs | Si | 8 | N | 2(W) | 2W (Ta) | 2 N-Channel (Dual) | 11.7Ohm @ 250mA, 10V | 5V @ 1mA | 23.5pF @ 25V | 3.8nC @ 10V | 500V | MOSFET | Standard | MOSFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRLHS6376TR2PBF | Infineon Technologies | 数据表 | 9 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-VDFN Exposed Pad | 6 | 6-PQFN (2x2) | 3.6A | 11 ns | Cut Tape (CT) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 63MOhm | 150°C | -55°C | 1.5W | IRLHS6376 | Dual | 6.6W | 4.4 ns | 1.5W | 2 N-Channel (Dual) | 63mOhm @ 3.4A, 4.5V | 1.1V @ 10μA | 270pF @ 25V | 2.8nC @ 4.5V | 11ns | 30V | 9.4 ns | 3.6A | 800mV | 12V | 30V | 270pF | 12 ns | 逻辑电平门 | 63mOhm | 63 mΩ | 800 mV | 950μm | 2.1mm | 2.1mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMG8822UTS-13 | Diodes Incorporated | 数据表 | 8000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | SILICON | 4.9A Ta | 38.6 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 870mW | 鸥翼 | 260 | 40 | 8 | 2 | 增强型MOSFET | 7.8 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 25m Ω @ 8.2A, 4.5V | 900mV @ 250μA | 841pF @ 10V | 9.6nC @ 4.5V | 21.1ns | 10.1 ns | 4.9A | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDW2511NZ | ON Semiconductor | 数据表 | 346521 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | 2 | 41 ns | 7.1A | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | PowerTrench® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 20V | 1.6W | 7.1A | 1.6W | 1.6W | 2 N-Channel (Dual) Common Drain | 20mOhm @ 7.1A, 4.5V | 1.5V @ 250μA | 1000pF @ 10V | 17.3nC @ 4.5V | 84ns | 20V | 84 ns | 7.1A | 800mV | 12V | 20V | 1nF | 逻辑电平门 | 20mOhm | 20 mΩ | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SP8K3FU6TB | ROHM Semiconductor | 数据表 | 1230 In Stock | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 150°C TJ | Tape & Reel (TR) | 2004 | Obsolete | 1 (Unlimited) | SMD/SMT | EAR99 | 2W | *K3 | Dual | 增强型MOSFET | 2W | 2 N-Channel (Dual) | 24m Ω @ 7A, 10V | 2.5V @ 1mA | 600pF @ 10V | 11.8nC @ 5V | 30V | 7A | 2.5V | 7A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2.5 V | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2050LFDB-7 | Diodes Incorporated | 数据表 | 600 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | SILICON | 2 | 25 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e4 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | HIGH RELIABILITY | 730mW | 260 | 30 | AEC-Q101 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 5 ns | 2 N-Channel (Dual) | SWITCHING | 45m Ω @ 5A, 4.5V | 1V @ 250μA | 389pF @ 10V | 12nC @ 10V | 8ns | 20V | 8 ns | 3.3A | 12V | 4.5A | 0.045Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMD8260L | ON Semiconductor | 数据表 | 100 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 12-PowerWDFN | 12 | 82.3188mg | 47 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 1W | 260 | not_compliant | 未说明 | 2 | Dual | 1W | 12 ns | 2 N-Channel (Dual) | 5.8m Ω @ 15A, 10V | 3V @ 250μA | 5245pF @ 30V | 68nC @ 10V | 60V | 15A | 20V | 64A | 60V | METAL-OXIDE SEMICONDUCTOR | 150°C | Standard | 800μm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SM6K2T110 | ROHM Semiconductor | 数据表 | 3380 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SC-74, SOT-457 | 6 | SILICON | 2 | 12 ns | 150°C TJ | Tape & Reel (TR) | 2002 | e1 | yes | 不用于新设计 | 1 (Unlimited) | 6 | EAR99 | 2.4Ohm | 锡银铜 | 60V | 300mW | 鸥翼 | 260 | 200mA | 10 | *K2 | 6 | Dual | 增强型MOSFET | 300mW | 6 ns | 2 N-Channel (Dual) | SWITCHING | 2.4 Ω @ 200mA, 10V | 2.5V @ 1mA | 15pF @ 10V | 4.4nC @ 10V | 5ns | 5 ns | 200mA | 20V | 0.2A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.1mm | 2.9mm | 1.6mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK9K32-100EX | Nexperia USA Inc. | 数据表 | 867000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | SILICON | 2 | 39.5 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | TrenchMOS™ | 活跃 | 1 (Unlimited) | 4 | 雪崩 额定 | 64W | SINGLE | 鸥翼 | 8 | AEC-Q101; IEC-60134 | R-PSSO-G4 | 2 | Dual | 增强型MOSFET | DRAIN | 12.6 ns | 2 N-Channel (Dual) | SWITCHING | 31m Ω @ 5A, 10V | 2.1V @ 1mA | 3168pF @ 25V | 27.3nC @ 5V | 22ns | 100V | 23.1 ns | 26A | 15V | 0.033Ohm | 100V | 106A | 74 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4826 | Alpha & Omega Semiconductor Inc. | 数据表 | 10200 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 2W | 2 N-Channel (Dual) | 25m Ω @ 6.3A, 10V | 3V @ 250μA | 2300pF @ 30V | 58nC @ 10V | 60V | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMTH4007SPDQ-13 | Diodes Incorporated | 数据表 | 60000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | -55°C~175°C TJ | Tape & Reel (TR) | 2015 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 2.6W | 未说明 | 未说明 | 2.6W | 2 N-Channel (Dual) | 8.6m Ω @ 17A, 10V | 4V @ 250μA | 2026pF @ 30V | 41.9nC @ 10V | 40V | 14.2A | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS8333C | ON Semiconductor | 数据表 | 5000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 2 | 11 ns | 4.1A 3.4A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | SMD/SMT | 2W | 4.1A | 2W | 4.5 ns | 900mW | N and P-Channel | 80m Ω @ 4.1A, 10V | 3V @ 250μA | 282pF @ 10V | 6.6nC @ 4.5V | 13ns | 2 ns | 4.1A | 20V | 30V | 30V | 逻辑电平门 | 1.7 V | 1.5mm | 5mm | 4mm | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK7K6R2-40EX | Nexperia USA Inc. | 数据表 | 7500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | SILICON | 2 | 21 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 6 | 68W | 鸥翼 | 未说明 | 未说明 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | 2 | Dual | 增强型MOSFET | DRAIN | 9.5 ns | 2 N-Channel (Dual) | SWITCHING | 5.8m Ω @ 20A, 10V | 4V @ 1mA | 2210pF @ 25V | 32.3nC @ 10V | 16ns | 40V | 17 ns | 40A | 20V | 40V | 157 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7555TRPBF | Infineon Technologies | 数据表 | 66652 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Micro8™ | 2 | 60 ns | 4.3A | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | HEXFET® | Obsolete | 1 (Unlimited) | 55mOhm | 150°C | -55°C | -20V | 1.25W | -4.3A | IRF7555PBF | Dual | 1.25W | 10 ns | 1.25W | 2 P-Channel (Dual) | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250μA | 1066pF @ 10V | 15nC @ 5V | 46ns | 20V | 64 ns | -4.3A | 12V | -20V | 1.066nF | 逻辑电平门 | 55mOhm | 55 mΩ | 860μm | 3mm | 3mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMD8240L | ON Semiconductor | 数据表 | 2800 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 12-PowerWDFN | 12 | 82.3188mg | 36 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 2.1W | 未说明 | not_compliant | 未说明 | 2 | Dual | 2.1W | 12 ns | 2 N-Channel (Dual) | 2.6m Ω @ 23A, 10V | 3V @ 250μA | 4230pF @ 20V | 56nC @ 10V | 40V | 23A | 2V | 20V | 40V | 150°C | Standard | 800μm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC2004LPK-7 | Diodes Incorporated | 数据表 | 42000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-SMD, No Lead | 6 | 21.092045mg | SILICON | 750mA 600mA | 2 | -65°C~150°C TJ | Tape & Reel (TR) | 2012 | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | HIGH RELIABILITY | 500mW | BOTTOM | 260 | 40 | 6 | 增强型MOSFET | 500mW | N and P-Channel | SWITCHING | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 150pF @ 16V | N-CHANNEL AND P-CHANNEL | 600mA | 8V | 0.75A | 0.55Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 480μm | 1.6mm | 1.2mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AON3818 | Alpha & Omega Semiconductor Inc. | 数据表 | 1676 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | AlphaMOS | yes | 活跃 | 1 (Unlimited) | 2.7W | unknown | 2.7W | 2 N-Channel (Dual) Common Drain | 13.5m Ω @ 8A, 4.5V | 1.2V @ 250μA | 840pF @ 12V | 15nC @ 4.5V | 24V | 8A | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMD4N03R2G | ON Semiconductor | 数据表 | 2469 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 26 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | 16 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 2W | 未说明 | 未说明 | 8 | Dual | 7 ns | 2 N-Channel (Dual) | 60m Ω @ 4A, 10V | 3V @ 250μA | 400pF @ 20V | 16nC @ 10V | 14ns | 30V | 10 ns | 4A | 20V | 4A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTJD2152PT1G | ON Semiconductor | 数据表 | 63000 In Stock | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 20 hours ago) | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | 50 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | -8V | 270mW | 鸥翼 | 260 | -775mA | 40 | NTJD2152P | 6 | 不合格 | Dual | 增强型MOSFET | 270mW | 2 P-Channel (Dual) | SWITCHING | 300m Ω @ 570mA, 4.5V | 1V @ 250μA | 225pF @ 8V | 4nC @ 4.5V | 23ns | 23 ns | 775mA | 8V | 0.775A | 0.3Ohm | -8V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 40 pF | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87503Q3E | Texas Instruments | 数据表 | 990000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 8-PowerVDFN | YES | 8 | SILICON | 10A Ta | 2 | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 无铅 | 260 | 未说明 | CSD87503 | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 15.6W | 2 N-Channel (Dual) Common Source | SWITCHING | 13.5m Ω @ 6A, 10V | 2.1V @ 250μA | 1020pF @ 15V | 17.4nC @ 4.5V | 30V | 10A | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | 194 pF | 3.3mm | 3.3mm | 1mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2016LHAB-7 | Diodes Incorporated | 数据表 | 15325 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | 6 | U-DFN2030-6 | 7.5A | 40.9 ns | -55°C~150°C TJ | Cut Tape (CT) | 2013 | 活跃 | 1 (Unlimited) | 150°C | -55°C | 1.2W | 2 | Dual | 6.9 ns | 1.2W | 2 N-Channel (Dual) Common Drain | 15.5mOhm @ 4A, 4.5V | 1.1V @ 250μA | 1550pF @ 10V | 16nC @ 4.5V | 15.5ns | 20V | 12 ns | 7.5A | 12V | 20V | 1.55nF | 逻辑电平门 | 30mOhm | 15.5 mΩ | 600μm | 2.05mm | 3.05mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMN3F31DN8TA | Diodes Incorporated | 数据表 | 33050 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 5.7A | 2 | 16 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 24mOhm | Matte Tin (Sn) | 1.8W | 鸥翼 | 260 | 40 | 8 | 2 | Dual | 增强型MOSFET | 2.9 ns | 2 N-Channel (Dual) | SWITCHING | 24m Ω @ 7A, 10V | 3V @ 250μA | 608pF @ 15V | 12.9nC @ 10V | 3.3ns | 8 ns | 7.3A | 20V | 5.7A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HUFA76407DK8T-F085 | ON Semiconductor | 数据表 | 2380 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, UltraFET™ | e4 | yes | 不用于新设计 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | ULTRA-LOW RESISTANCE | 鸥翼 | 260 | 30 | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2.5W | 2 N-Channel (Dual) | SWITCHING | 90m Ω @ 3.8A, 10V | 3V @ 250μA | 330pF @ 25V | 11.2nC @ 10V | 60V | MS-012AA | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant |
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